Inspection device for inspecting tft

ABSTRACT

Provided is an inspection device which inspects a thin film transistor (TFT) for supplying a current to a light emitting element. The inspection device includes: a first current supply circuit which supplies a drain current between a drain and a source of the TFT; a gate voltage adjustment circuit which adjust a gate voltage to be applied to a gate of the TFT so as to allow a predetermined specified current to flow between the drain and source of the TFT; and a measurement unit which measures the gate voltage adjusted by the gate voltage adjustment circuit.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.10/970,555 filed Oct. 21, 2004, the complete disclosure of which, in itsentirety, is herein incorporated by reference.

BACKGROUND OF THE INVENTION

The present invention relates to an inspection device which inspectsthin-film transistors (TFTs). The present invention particularly relatesto an inspection device which inspects the characteristics of TFTs forsupplying a current to respective pixels included in a display device.

In recent years, organic electroluminescence displays (organic ELdisplays), which include organic light emitting diodes (OLEDs) aspixels, have been receiving attention as a display device capable ofbright display at low power. For the achievement of efficient volumeproduction of the organic EL display, it is important to reduce themanufacturing costs and to enhance the yield by detecting and removingdefectives in as early a manufacturing step as possible.

Conventionally, there have been proposed techniques to detect adefective TFT array for supplying a current to OLEDs (see PatentDocuments 1 and 2). In these techniques, the characteristic of each TFTis inspected prior to a process of forming OLEDs on a TFT array. Thus,in comparison with a case of detecting a defective after OLEDs areformed on a TFT array, it is possible to avoid wasting the process offorming OLEDs and the materials of the OLEDs and thereby to reduce themanufacturing costs.

For example, FIGS. 17( a) and 17(b) each show processes through which anorganic EL display panel with OLEDs is manufactured. As shown in FIG.17( a), when inspection is performed after a cell process for formingOLEDs on a TFT array, the OLEDs have to be formed on a defective TFTarray, which is wasteful. On the other hand, as shown in FIG. 17( b), ifinspection can be performed prior to the cell process, it is possible toreduce the wastes involved in the cell process.

More specifically, in the technique in Patent Document 1, a commonelectrode is connected with each TFT in a TFT array prior to a processof patterning on the TFT array pixel electrodes to be connected withOLEDs. A power supply is then connected with the common electrode, and acurrent flowing in each TFT is measured. Moreover, in the technique inPatent Document 2, pixel electrodes in a TFT array are energized bydipping the TFT array in an electrolytic liquid, and then a currentflowing in each TFT is measured.

[Patent Document 1] Japanese Unexamined Patent Publication No.2002-108243

[Patent Document 2] Japanese Unexamined Patent Publication No.2002-72918

However, in the manufacture of an organic EL display by the technique inthe above Patent Document 1, a process of stripping the common electrodeand patterning the pixel electrodes to be connected with the OLEDs isrequired after the inspection of the TFT array. That is, it can hardlybe said that the inspection is performed after the TFT array isfinished. Therefore, it can be thought that a defect may occur after theinspection.

According to the technique in the above Patent Document 2, since it isdifficult to accurately measure a voltage applied to each TFT, there isa problem that an error in the inspection result may be large. Moreover,there are some occasions where the TFT array dipped in the electrolytemay suffer damage such as breakage and dissolution.

In addition, both the above techniques adopt a measurement method inwhich a given voltage is applied between a drain and a source of a TFTand then a drain current is measured. In order to realize this method,it is necessary to apply a desired voltage with a precise voltage valueto each of the drain and source. In the inspection prior to the cellprocess, however, since one terminal of the drain and source is notconnected with the circuit, it is difficult to apply a stable voltage tothe terminal.

SUMMARY OF THE INVENTION

In this connection, an object of the present invention is to provide aninspection device which is capable of solving the above-describedproblems. This object will be achieved by combinations of features setforth in independent claims in the scope of claims. In addition,dependent claims define more advantageous specific examples of thepresent invention.

In order to solve the foregoing problems, a first aspect of the presentinvention provides an inspection device which inspects a thin filmtransistor (TFT) for supplying a current to a light emitting element,the inspection device including: a first current supply circuit whichsupplies a drain current between a drain and a source of the TFT; a gatevoltage adjustment circuit which adjusts a gate voltage to be applied toa gate of the TFT so that a predetermined specified current flowsbetween the drain and source of the TFT; and a measurement unit whichmeasures the gate voltage adjusted by the gate voltage adjustmentcircuit.

Note that the above summary of the present invention does not cite allthe necessary features of the present invention and thatsub-combinations of groups of these features may constitute theinvention.

According to the present invention, it is possible to enhance theprecision with which the inspection of TFTs is performed.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention and theadvantages thereof, reference is now made to the following descriptiontaken in conjunction with the accompanying drawings.

FIG. 1 schematically shows an inspection device 10 inspecting a TFTarray 20.

FIG. 2 shows a block diagram of the inspection device 10.

FIG. 3 shows an example of an offset current measurement unit 118.

FIG. 4 shows an example of an Id-Vg curve of a TFT 200.

FIGS. 5( a) to 5(d) show layouts of a pixel electrode and a TFT.

FIG. 6( a) shows an equivalent circuit to a circuit where the inspectiondevice 10 inspects the TFT in FIG. 5( a), and FIG. 6( b) shows anequivalent circuit to a circuit where the inspection device 10 inspectsthe TFT in FIG. 5( b).

FIG. 7 shows a block diagram of an inspection device 10 which inspects aTFT array 20 in which source voltages are unknown.

FIGS. 8( a) and 8(b) show equivalent circuits to a circuit where theinspection device 10 inspects the TFT in FIG. 5(c).

FIG. 9( a) shows an equivalent circuit to a circuit where the inspectiondevice 10 inspects the TFT shown in FIG. 5( d) by using a basicsequence, and FIG. 9( b) shows a configuration of a circuit where theinspection device 10 calculates a threshold voltage Vth of the TFT byusing an extended sequence.

FIG. 10 shows a block diagram of an inspection device 10 in a firstmodified example.

FIG. 11( a) shows a conceptual diagram of an inspection device 10 in asecond modified example, and FIG. 11( b) shows an equivalent circuit toa circuit where the inspection device 10 inspects a TFT array 20 in thesecond modified example.

FIGS. 12( a) and 12(b) show block diagrams of an inspection device 10 ina third modified example.

FIGS. 13( a) and 13(b) show results of a simulation where the inspectiondevice 10 shown in FIG. 1 inspects the TFT array 20.

FIGS. 14( a) and 14(b) show results of a simulation where the TFT array20 is inspected using a conventional technique.

FIGS. 15( a) and 15(b) show results of a simulation where the inspectiondevice 10 shown in FIG. 7 inspects the TFT array 20.

FIG. 16( a) shows results of a simulation where the inspection device 10shown in FIG. 11 inspects the TFT array 20, and FIG. 16( b) showsresults of a simulation where, while pixel electrodes are in contactwith conductive rubber or the like, the TFT array 20 is inspected usinga conventional method.

FIGS. 17( a) and 17(b) each show processes through which an organic ELdisplay panel with OLEDs is manufactured.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Hereinafter, the present invention will be described through anembodiment of the invention. However, the undermentioned embodiment isnot intended to limit the invention according to the scope of claims,and not all the combinations of features described in the embodiment arenecessary for the solving means of the present invention.

FIG. 1 schematically shows an inspection device 10 inspecting a TFTarray 20. FIG. 2 shows a block diagram of the inspection device 10. Anobject of the inspection device 10 is to inspect the TFT array 20 thatis a panel in which a plurality of TFTs for providing a current to lightemitting elements such as organic light emitting diodes (OLEDs) arearrayed in matrix, and to determine whether the TFT array 20 is adefective or non-defective.

The TFT array 20 includes a plurality of data lines, select lines, andpower supply wiring. The data line supplies gate voltage to be appliedto each of a plurality of the TFTs arrayed in a single column. Theselect line selects a plurality of the TFTs to which the gate voltagesupplied through the data line is to be applied. The power supply wiringsupplies a current to drains or sources of a plurality of the TFTs incommon. The inspection device 10 sequentially inspects thecharacteristic of each TFT included in the TFT array 20. In FIG. 2,however, for convenience, a description will be given of a case ofinspecting the characteristic of a TFT 200 included in the TFT array 20.

TFT 200 is, for example, a P-channel MOS transistor. In accordance withthe relationship between gate and drain voltages, the TFT 200 operatesin a linear region where the drain current varies substantially linearlywith voltages between the drain and source, or in a saturation regionwhere the drain current varies less than in the linear region. Inaddition, only a select line for supplying voltage to the TFT 200 isturned on.

First, an ionized air ejector blows ionized air 215 onto a pixelelectrode 210 where the TFT 200 is in contact with the light emittingelement, thereby securing a path through which a current flows into thepixel electrode 210. As a result, one of the drain and source of the TFT200, for instance, the drain in this example has a potential differenceof an unknown and variable magnitude from a ground potential. Here, theionized air can be generated by corona discharge, a soft X-ray, or thelike. Instead of this, the path through which a current flows may besecured by irradiating an electron beam onto the pixel electrode 210 orby dipping the pixel electrode 210 into an electrolyte.

The inspection device 10 includes a first current supply circuit 100, agate voltage adjustment circuit 110, a measurement unit 120, and acalculation unit 130. The first current supply circuit 100 applies sucha voltage as to cause the TFT 200 to operate in the saturation region,through the power supply wiring, to the other one of the drain andsource of the TFT 200, for instance, one which is not connected with thepixel electrode 210 (the source in the example in FIG. 2). Thus, thefirst current supply circuit 100 supplies a current between the drainand source of the TFT 200. As for a concrete circuit configuration ofthe first current supply circuit 100, it includes a voltage source 102,an electrical resistance 104, and an output terminal 108.

The voltage source 102 is set to a predetermined potential (Vc). Theelectrical resistance 104 has a resistance value (Rc) and is connectedwith the voltage source 102. The output terminal 108 is connected withthe electrical resistance 104 and supplies a current flowing from thevoltage source 102 through the electrical resistance 104, to the TFT 200through the power supply wiring in the TFT array 20. The potential (Vc)of the voltage source 102 and the resistance value (Rc) of theelectrical resistance 104 are adjusted such that the first currentsupply circuit 100 allows a predetermined specified current (Ic) to flowwhen the potential of the output terminal 108 is equal to apredetermined specified voltage (Vdd). That is, the potential (Vc) andthe resistance value (Rc) are adjusted such that the followingrelationship is established.

Specified Current (Ic)=|Potential of Voltage Source (Vc)−SpecifiedVoltage (Vdd)|/Resistance Value (Rc)

The gate voltage adjustment circuit 110 sequentially adjusts gatevoltages to be applied to a gate of the TFT 200 so that at least twodifferent specified currents flow between the drain and source of theTFT 200. Specifically, the gate voltage adjustment circuit 110 adjuststhe gate voltage for each of the specified currents so that the draincurrent is reduced when the drain current supplied from the firstcurrent supply circuit 100 is larger than the specified current inquestion and so that the drain current is increased when the draincurrent supplied from the first current supply circuit 100 is smallerthan the specified current in question.

As for a concrete circuit configuration of the gate voltage adjustmentcircuit 110, it includes an amplifier 115. The amplifier 115 receives aninput of the potential of the output terminal 108 by the inverting inputterminal and an input of the specified voltage (Vdd) by thenon-inverting input terminal. When the potential of the output terminal108 is different from the specified voltage (Vdd), the amplifier 115applies such a gate voltage as to make the potential of the outputterminal 108 equal to the specified voltage (Vdd), to the data line tothe TFT 200.

An offset current measurement unit 118, prior to inspection andmeasurement, measures the magnitude of an offset current supplied fromthe first current supply circuit 100 to the power supply wiring in astate where all the TFTs in the TFT array 20 are not driven. When themeasurement unit 120 measures the gate voltage, the offset currentmeasurement unit 118 further supplies the offset current to the powersupply wiring. An example of this will be described using FIG. 3.

FIG. 3 shows an example of the offset current measurement unit 118. Theoffset current measurement unit 118 includes an amplifier 300, anelectrical resistance 310, a capacitor 320, and a switch 330. Theamplifier 300 receives an input of the specified voltage (Vdd) at thenon-inverting input terminal. An output terminal of the amplifier 300 isconnected with one end of the electrical resistance 310 and with one endof the capacitor 320. The other end of the electrical resistance 310 isconnected with the power supply wiring in the TFT array 20. The otherend of the capacitor 320 is connected with the power supply wiring inthe TFT array 20 via the switch 330 and also connected with an invertinginput terminal of the amplifier 300.

First, prior to the inspection and measurement, the offset currentmeasurement 118 turns on the switch 330 (that is, shorts both ends ofthe switch 330) in a state where all the TFTs in the TFT array 20 arenot driven. As a result, the voltage of the power supply wiring becomesequal to the specified voltage (Vdd), and a potential difference whichallows the offset current to flow in the power supply wiring isgenerated between both the ends of the electrical resistance 310. Thus,the offset current measurement unit 118 can charge the capacitor 320with a voltage which can cause the offset current to flow in the powersupply wiring when the voltage of the power supply wiring is equal tothe specified voltage (Vdd) (this operation will be referred to assampling operation).

Next, when the measurement unit 120 measures the gate voltage, theoffset current measurement unit 118 turns off the switch 330. As aresult, owing to the voltage charged in the capacitor 320 through thesampling operation, a potential difference which can cause the offsetcurrent to flow is generated between both the ends of the electricalresistance 310. Thus, the offset current measurement unit 118 can supplythe offset current to the power supply wiring (this operation will bereferred to as holding operation). As described above, according to theoffset current measurement unit 118, even when a short circuit or thelike exists due to a trouble in a circuit of the TFT array 20, it ispossible to allow the first current supply circuit 100 to supply only acurrent necessary for the measurement of the gate voltage by supplying acurrent caused by the trouble to the TFT 200 through the holdingoperation.

Subsequently, the measurement unit 120 sequentially measures at leasttwo gate voltages adjusted by the gate voltage adjustment circuit 110.

FIG. 4 shows an example of an Id-Vg curve of the TFT 200. Using thisdrawing, a description will be given of processing in which, based onthe measurement results from the measurement unit 120, the calculationunit 130 calculates a value β that is a parameter indicating a currentsupply ability between the drain and source of a TFT.

First, a condition that the TFT 200 operates in the saturation region isexpressed by the following expression (1).

[Expression 1]

Vds≧(Vgs−Vth)   (1)

Herein, Vds denotes a potential difference between the drain and source,Vgs denotes a potential difference between the gate and source, and Vthdenotes a threshold voltage that is a threshold of the potentialdifference between the gate and source necessary to allow a current toflow between the drain and source. That is, the first current supplycircuit 100 applies a voltage large enough to meet this condition, tothe source of the TFT 200.

The characteristic of the TFT 200 in the saturation region can beapproximated by the following expressions (2).

$\begin{matrix}\left\lbrack {{Expression}\mspace{20mu} 2} \right\rbrack & \; \\{{{Id} = {\frac{1}{2}{\beta \left( {{Vgs} - {Vth}} \right)}^{2}}}{\beta = \frac{\mu \cdot {Cox} \cdot W}{L}}} & (2)\end{matrix}$

Herein, Id denotes a drain current. In FIG. 4, the drain current (Id) isthe specified current (Ic).

Calculating a square root of the expressions (2) leads to the followingexpression (3).

$\begin{matrix}\left\lbrack {{Expression}\mspace{20mu} 3} \right\rbrack & \; \\{\sqrt{Id} = {\sqrt{\frac{\beta}{2}}\left( {{Vgs} - {Vth}} \right)}} & (3)\end{matrix}$

FIG. 4 shows a graph of this expression (3). That is, in the TFT 200operating in the saturation region, the square root of the drain currentis proportional to the gate voltage. In addition, the gradient of thesquare root of the drain current with respect to the gate voltage is thesquare root of a half of the value β.

The calculation unit 130 first calculates a voltage between the gate andsource by subtracting the specified voltage (Vdd), which is the sourcevoltage, from each of the two measured gate voltages. The calculationunit 130 then substitutes at least two sets of the specified current andthe calculated voltage between the gate and source, each into theexpression (3). As a result, simultaneous equations are obtained inwhich the square root of a half of the value β and Vth are unknowns.

The calculation unit 130 can calculates the value β in such a mannerthat these simultaneous equations are solved to calculate the squareroot of a half of the value β and the calculation result is squared andthen multiplied by 2. Along with this, the calculation unit 130 cancalculates the threshold voltage Vth, which is the threshold of thepotential difference between the gate and drain necessary to allow acurrent to flow between the drain and source.

In the following description, the method of calculating the value βshown through FIGS. 1 to 4 will be referred to as a basic sequence.

FIGS. 5( a) to 5(d) show layouts of a pixel electrode and a TFT. Thelayout of FIG. 5( a) is similar to that of the TFT described in FIG. 2.Apart from this layout, the TFT array 20 may adopt a mode shown in FIG.5( b) as a layout of a pixel electrode and a TFT. In FIG. 5( b), the TFTarray 20 includes an N-channel TFT in place of the P-channel TFT.Moreover, the drain of the N-channel TFT is connected with the pixelelectrode. Furthermore, the source of the N-channel TFT is grounded.

FIG. 6( a) shows an equivalent circuit to a circuit where the inspectiondevice 10 inspects the TFT in FIG. 5( a). Since the equivalent circuitshown in FIG. 6( a) has substantially the same configuration as that ofthe circuit shown in FIG. 2, a description thereof will be omitted. FIG.6( b) shows an equivalent circuit to a circuit where the inspectiondevice 10 inspects the TFT in FIG. 5( b). In this drawing, a TFT forselecting a pixel is represented by SW for short.

In the example of FIG. 6( b), the first current supply circuit 100applies a voltage to the source of the N-channel TFT, not of theP-channel TFT. Note that, in this drawing, the voltage applied by thefirst current supply circuit 100 is a negative voltage. In addition, acurrent supplied by the first current supply circuit 100 is a negativecurrent. As in this case, the application of voltage in this embodimentincludes a case of applying a negative voltage. Moreover, the supply ofa current includes a case of supplying a negative current, in otherwords, a case of drawing out a current.

In addition, the voltage source 102 and the electrical resistance 104included in the first current supply circuit 100 are adjusted such thatthe first current supply circuit 100 allows the specified current toflow when the output terminal 108 has a specified potential (forexample, ground potential). The gate voltage adjustment circuit 110adjusts the gate voltage so that the voltage to be applied by the firstcurrent supply circuit 100 becomes equal to the ground potential.

The measurement unit 120 sequentially measures the gate voltagesadjusted by the gate voltage adjustment circuit 110, and based on themeasured gate voltages, the calculation unit 130 calculates potentialdifferences between the gate and source. The calculation unit 130 thencalculates the value β and the threshold voltage (Vth) by using theaforementioned expression (3). As described above, since the sourcepotential is known, the inspection device 10 can calculate not only thevalue β but the threshold voltage (Vth), also in the example of FIG. 6(b) similarly to the example of FIG. 6( a).

On the other hand, according to each of the layouts shown in FIGS. 5( c)and 5(d), since the source of a TFT is connected with a pixel electrode,the inspection device 10 cannot obtain a value of the source voltage.Therefore, the inspection device 10 can obtain values of the gatevoltage and drain voltage but cannot calculate the potential differencebetween the gate and source.

Nevertheless, as will be described below, the inspection device 10 cancalculate the value β even when the potential difference between thegate and source cannot be calculated. Moreover, the inspection device 10can calculate the sum of the source voltage (Vs) and the thresholdvoltage (Vth).

Vgs can be expressed by (Vg−Vs) because Vgs is a potential differencebetween a gate voltage and a source voltage. Substituting thisexpression into the aforementioned expression (3) will yield thefollowing expression (4). Further, transforming the expression (4) willlead to the expression (4)′.

$\begin{matrix}\left\lbrack {{Expression}\mspace{20mu} 4} \right\rbrack & \; \\{\sqrt{Id} = {\sqrt{\frac{\beta}{2}}\left( {{Vg} - {Vs} - {Vth}} \right)}} & (4) \\{\sqrt{Id} = {\sqrt{\frac{\beta}{2}}\left( {{Vg} - \left( {{Vs} + {Vth}} \right)} \right)}} & (4)^{\prime}\end{matrix}$

If two or more sets of Vg and Id are substituted into this expression(4)′, the calculation unit 130 can calculate the value β as well as(Vs+Vth) that is the sum of the source voltage and the thresholdvoltage. Here, the sum of the source voltage and the threshold voltageis, namely, the threshold of a potential difference between a gatevoltage and a ground potential, necessary to allow a current to flowbetween the drain and source of a TFT.

By repeating the processing described above for each of the TFTs in theTFT array 20, the calculation unit 130 can calculate at least the valueβ for each TFT, irrespective of the layouts of a TFT and a pixelelectrode. Moreover, the calculation unit 130 can calculate thethreshold voltage (Vth), depending on the layouts of a TFT and a pixelelectrode. Based on the calculated values β and the like, for example,the calculation unit 130 executes the following processing.

For example, when the range of dispersion of the values β of the TFTs iswider than a predetermined reference, the calculation unit 130 maydetermine that the TFT array 20 in question is defective and may producean output to that effect. As an example, when the value β of any of theTFTs in the same TFT array 20 is not within a predetermined range, thecalculation unit 130 determines that the TFT array 20 in question isdefective. Thus, it is possible to accurately inspect the TFT array 20as to whether it is a defective or non-defective.

Instead, the calculation unit 130 may determine the dispersion of thevalues β of only a plurality of the TFTs which are arrayed apredetermined distance or more away from one another. Thus, it ispossible to omit the inspection of the neighboring TFTs which are hardto exhibit a wide dispersion and thereby to reduce time and costsrequired for the inspection.

Moreover, based on (Vs+Vth), the sum of the source voltage and thethreshold voltage of a TFT calculated for each of the TFTs included inthe TFT array 20, the calculation unit 130 may determine thedefectiveness of the TFT array 20. For example, when the range ofdispersion of the thresholds for the TFTs is wider than a predeterminedreference, the calculation unit 130 determines that the TFT array 20 inquestion is defective. In this case, even when the circuit configurationis such that the source voltages cannot be measured precisely, it ispossible to properly determine the defectiveness of the TFT array 20 inquestion if it is known beforehand that the source voltages hardly varyfrom one TFT to another.

Next, a description will be given of a method of further calculating thethreshold voltage Vth in the case of the layout shown in FIG. 5( c) or5(d).

FIG. 7 shows a block diagram of an inspection device 10 which inspects aTFT array 20 in which the source voltages are unknown. This drawingshows an example where the inspection device 10 calculates the value βand the threshold voltage Vth for a TFT in the layout shown in FIG. 5(c). Specifically, by being subjected to blowing ionized air 225, a pixelelectrode connected with the source of a TFT 220 shown in this drawinghas a potential difference of an unknown and variable magnitude from aground potential.

The inspection device 10, in addition to the configuration shown in FIG.2, further includes a gate voltage application circuit 135, a secondcurrent supply circuit 140, and a drain current adjustment circuit 150.The gate voltage application circuit 135 applies a predetermined gatevoltage (Vg) to the gate of the TFT 220 through the data line. Thesecond current supply circuit 140 supplies a drain current between thedrain and source of the TFT 220 by applying a voltage to the drain ofthe TFT 220 through the power supply wiring. As for a concrete circuitconfiguration of the second current supply circuit 140, it includes aninput terminal 142, an electrical resistance 144, and an output terminal146. The input terminal 142 is connected with one end of the electricalresistance 144. The output terminal is connected with the other end ofthe electrical resistance 144 and supplies a current to the drain of theTFT 220 through the power supply wiring.

The drain current adjustment circuit 150 adjusts the drain current to besupplied by the second current supply circuit 140 so that a potentialdifference between a gate voltage and a drain voltage is equal to apreset set potential and that the TFT 220 is made to operate within thelinear region. Thus, Vc is adjusted so that the potential Vout of theoutput terminal 146 is constant even when the source potential varies.As for a concrete circuit configuration of the drain current adjustmentcircuit 150, it includes a potential difference setting circuit 158 andan amplifier 155. The potential difference setting circuit 158 receivesan input of the drain voltage and provides the amplifier 155 with anoutput of a voltage which is different from the inputted drain voltageby a set potential (Vofs), for example, a voltage which is higher thanthe drain voltage by the set potential (Vofs). Here, the set potential(Vofs) is set so as to be sufficiently larger than a predicted value ofthe threshold voltage (Vth). Thus, the TFT 200 will operate in thelinear region.

The amplifier 155 receives an input of the output of the potentialdifference setting circuit 158 at an inverting input terminal and aninput of the gate voltage (Vg) at a non-inverting input terminal. Whenthe output voltage of the potential difference setting circuit 158 isdifferent from the gate voltage, the amplifier 155 applies such avoltage as to make the output voltage of the potential differencesetting circuit 158 equal to the gate voltage, to the input terminal 142of the second current supply circuit 140. In addition, the drain currentadjustment circuit 150 may share an amplifier with the gate voltageadjustment circuit 110 shown in FIG. 2, and may use the amplifier 115which the gate voltage adjustment circuit 110 has, as the amplifier 155by switching.

The measurement unit 120, in addition to the processing shown in FIG. 2,further sequentially measures the drain currents adjusted by the draincurrent adjustment circuit 150 for at least two different set potentials(Vofs). Specifically, the measurement unit 120 measures the voltage Vcapplied to the input terminal 142 by the drain current adjustmentcircuit 150 and, based on the measured Vc, calculates the drain current.The calculation unit 130, in addition to the processing shown in FIG. 2,further calculates the threshold Vth of a potential difference betweenthe gate and source of the TFT 220 necessary to allow a current to flowbetween the drain and source of the TFT 220, based on the drain currentssequentially measured by the measurement unit 120 and on the calculatedvalue β. Concrete processing about this will be described below.

First, a condition that the TFT 220 operates in the linear region isexpressed by the following expression (5).

[Expression 5]

Vds≦(Vgs−Vth)   (5)

Herein, Vds denotes a potential difference between the drain and source,Vgs denotes a potential difference between the gate and source, and Vthdenotes a threshold of a voltage between the gate and source necessaryto allow a current to flow between the drain and source. That is, thegate voltage application circuit 135 and the second current supplycircuit 140 apply a voltage which meets this condition to the drain orgate of the TFT 220.

Moreover, the characteristic of the TFT 220 in the linear region can beapproximated by the following expressions (6).

$\begin{matrix}\left\lbrack {{Expression}\mspace{20mu} 6} \right\rbrack & \; \\{{{Id} = {\frac{1}{2}{\beta \left\lbrack {{2{\left( {{Vgs} - {Vth}} \right) \cdot {Vds}}} - {Vds}^{2}} \right\rbrack}}}{\beta = \frac{\mu \cdot {Cox} \cdot W}{L}}} & (6)\end{matrix}$

The calculation unit 130 calculates the threshold Vth by usingexpressions (6)′ obtained by transforming the expression (6).

$\begin{matrix}\left\lbrack {{Expression}\mspace{14mu} 6^{\prime}} \right\rbrack & \; \\{{{Id}_{1} = {\frac{1}{2}{\beta \left\lbrack {{2{\left( {{Vg}_{1} - {Vs} - {Vth}} \right) \cdot \left( {{Vd}_{1} - {Vs}} \right)}} - \left( {{Vd}_{1} - {Vs}} \right)^{2}} \right\rbrack}}}{{Id}_{2} = {\frac{1}{2}{\beta \left\lbrack {{2{\left( {{Vg}_{2} - {Vs} - {Vth}} \right) \cdot \left( {{Vd}_{2} - {Vs}} \right)}} - \left( {{Vd}_{2} - {Vs}} \right)^{2}} \right\rbrack}}}} & (6)^{\prime}\end{matrix}$

Herein, Id₁ and Id₂ denote drain currents sequentially measured by themeasurement unit 120; Vg₁ and Vd₁ denote a gate voltage and a drainvoltage, respectively, when Id₁ is measured; and Vg₂ and Vd₂ denote agate voltage and a drain voltage, respectively, when Id₂ is measured.

In these expressions, unknowns are Vs, Vth and β. If the calculationunit 130 has already calculated the value β through the basic sequence,unknowns are Vs and Vth. Accordingly, the calculation unit 130 cancalculate Vs and Vth by solving the simultaneous equations shown in theexpressions (6)′.

Thus, as shown in FIG. 7, even when the source of a TFT is connectedwith the pixel electrode, the inspection device 10 can calculate thethreshold voltage Vth, based on the value β calculated beforehand. Inthe following description, the method of calculating the thresholdvoltage by the processing shown in this drawing will be referred to asan extended sequence.

FIGS. 8( a) and 8(b) show equivalent circuits to a circuit where theinspection device 10 inspects the TFT shown in FIG. 5( c). In thesedrawings, a TFT for selecting a pixel is represented by SW for short.FIG. 8( a) shows a configuration of the circuit where the inspectiondevice 10 calculates the value β of the TFT through the basic sequence.Due to ionized air or the like, the source of the TFT 220 has apotential difference of an unknown and variable magnitude from a groundpotential. The first current supply circuit 100 supplies a currentbetween the drain and source of the TFT 220 by applying, to the drain ofthe TFT 220, such a voltage as to allow the N-channel TFT 220 to operatein the saturation region. Since a concrete circuit configuration of thefirst current supply circuit 100 is substantially the same as that ofthe first current supply circuit 100 shown in FIG. 2, a descriptionthereof will be omitted.

The gate voltage adjustment circuit 110 sequentially adjusts gatevoltages to be applied to the TFT 220 so that at least two differentspecified currents flow between the drain and source of the TFT 220. Asfor a concrete circuit configuration of this gate voltage adjustmentcircuit 110, it is different from the gate voltage adjustment circuit110 shown in FIG. 2 in that the amplifier 115 of this gate voltageadjustment circuit 110 receives an input of the specified voltage at theinverting input terminal and an input of a potential of the outputterminal at the non-inverting input terminal. Since the other points aresubstantially the same as those of the gate voltage adjustment circuit110 shown in FIG. 2, a description thereof will be omitted. Themeasurement unit 120 sequentially measures the gate voltages adjusted bythe gate voltage adjustment circuit 110, and the calculation unit 130calculates the value β by using the aforementioned expression (4)′.

FIG. 8( b) shows a configuration of the circuit where the inspectiondevice 10 calculates the threshold voltage Vth of the TFT through theextended sequence. Since the configuration shown in this drawing is oneillustrated as an equivalent circuit of the inspection device 10 shownin FIG. 7, a description thereof will be omitted. The calculation unit130 can calculate the threshold voltage Vth by using the aforementionedexpressions (6)′, based on the value β calculated by the circuit of FIG.8( a) and the drain currents measured by the circuit of FIG. 8( b).

FIG. 9( a) shows an equivalent circuit to a circuit where the inspectiondevice 10 inspects the TFT shown in FIG. 5( d) through the basicsequence. In this drawing, a TFT for selecting a pixel is represented bySW for short. A TFT 240 is a P-channel TFT, and due to ionized air orthe like, the source of the TFT 240 has a potential difference of anunknown and variable magnitude from a ground potential.

The first current supply circuit 100 supplies a current between thedrain and source of the TFT 240 by applying, to the drain of the TFT240, such a voltage as to cause the TFT 240 to operate in the saturationregion. Since a concrete circuit configuration of the first currentsupply circuit 100 is substantially the same as that of the firstcurrent supply circuit 100 shown in FIG. 2, a description thereof willbe omitted.

The gate voltage adjustment circuit 110 sequentially adjusts gatevoltages to be applied to the TFT 240 so that at least two differentspecified currents flow between the drain and source of the TFT 240. Asfor a concrete circuit configuration of this gate voltage adjustmentcircuit 110, it is different from the gate voltage adjustment circuit110 shown in FIG. 2 in that the amplifier 115 of this gate voltageadjustment circuit 110 receives an input of the specified voltage at theinverting input terminal and an input of a potential of the outputterminal 108 at the non-inverting input terminal. Since the other pointsare substantially the same as those of the gate voltage adjustmentcircuit 110 shown in FIG. 2, a description thereof will be omitted. Themeasurement unit 120 sequentially measures the gate voltages adjusted bythe gate voltage adjustment circuit 110, and the calculation unit 130calculates the value β by using the aforementioned expression (4)′.

FIG. 9( b) shows a configuration of a circuit where the inspectiondevice 10 calculates the threshold voltage Vth of the TFT through theextended sequence. The gate voltage application circuit 135 applies apredetermined gate voltage (Vg) to the gate of the TFT 240. The secondcurrent supply circuit 140 supplies a drain current between the drainand source of the TFT 240 by applying a voltage to the drain of the TFT240. Since a concrete circuit configuration of this second currentsupply circuit 140 is substantially the same as that of the secondcurrent supply circuit 140 shown in FIG. 7, a description thereof willbe omitted.

The drain current adjustment circuit 150 adjusts the drain current to besupplied by the second current supply circuit 140 so that the gatevoltage is different from the drain voltage by a preset set potentialand that the TFT 240 is allowed to operate in the linear region. As fora concrete circuit configuration of this drain current adjustmentcircuit 150, it is different from the drain current adjustment circuit150 shown in FIG. 7 in the following two points. First, the potentialdifference setting circuit 158 receives an input of the drain voltageand provides the amplifier 155 with a voltage which is lower than theinputted drain voltage by the set potential (Vofs). Moreover, Theamplifier 155 receives an input of the output of the potentialdifference setting circuit 158 at the inverting input terminal and aninput of the gate voltage (Vg) at the non-inverting input terminal.

The calculation unit 130 can calculate the threshold voltage Vth byusing the aforementioned expressions (6)′, based on the value βcalculated by the circuit of FIG. 9( a) and the drain currents measuredby the circuit of FIG. 9( b).

FIG. 10 shows a block diagram of an inspection device 10 in a firstmodified example. An object of the inspection device 10 in this exampleis, similarly to the inspection device 10 shown in FIG. 7, to calculatethe value β and threshold voltage Vth even when the source voltage of aTFT is unknown. This drawing will describe a case where the inspectiondevice 10 inspects a TFT 250 in the layout shown in FIG. 5( c).

By being subjected to blowing ionized air 215, a pixel electrodeconnected with the source of the TFT 250 shown in this drawing has apotential difference of an unknown and variable magnitude from a groundpotential. The inspection device 10, in addition to the configuration ofthe inspection device 10 shown in FIG. 7, further includes a potentialdifference retaining circuit 160, a third current supply circuit 170,and a drain voltage adjustment circuit 180. Moreover, the inspectiondevice 10 in this drawing does not need to include the gate voltageapplication circuit 135, the second current supply circuit 140, and thedrain current adjustment circuit 150.

The potential difference retaining circuit 160 maintains such apotential difference as to cause the TFT 250 to operate in the linearregion between the gate and drain voltages of the TFT 250. Specifically,the potential difference (Vofs) to be retained by the potentialdifference retaining circuit 160 is set to a value which is sufficientlylarger than a predicted value of the threshold voltage (Vth). The thirdcurrent supply circuit 170 supplies a drain current between the drainand source of the TFT 250 by applying a drain voltage to the drain ofthe TFT 250 through the power supply wiring.

As for a concrete circuit configuration of the third current supplycircuit 170, it includes an input terminal 172, an electrical resistance174, and an output terminal 176. One end of the electrical resistance174 is connected with the input terminal 172 and the other end thereofis connected with the output terminal 176. Moreover, the electricalresistance 174 has such a resistance value as to allow the third currentsupply circuit 170 to output a preset set current (Ic) when a potentialdifference between the input terminal 172 and the output terminal 176 isequal to a predetermined specified potential.

The drain voltage adjustment circuit 180 adjusts the drain voltage sothat the set current (Ic) flows between the drain and source of the TFT250. As for a concrete circuit configuration of the drain voltageadjustment circuit 180, it includes a potential difference settingcircuit 182 and an amplifier 184. The potential difference settingcircuit 182 receives an input of a potential of the input terminal 172and provides the amplifier 184 with an output of a voltage which isdifferent from the potential of the input terminal 172 by a specifiedpotential. The amplifier 184 receives an input of the output of thepotential difference setting circuit 182 at the inverting input terminaland an input of a potential of the output terminal 176 at thenon-inverting input terminal. When the output of the potentialdifference setting circuit 182 is different from the potential of theoutput terminal 176, the amplifier 184 applies, to the input terminal172, such a voltage as to make the output of the potential differencesetting circuit 182 equal to the potential of the output terminal 176.

The measurement unit 120 causes the drain voltage adjustment circuit 180to sequentially adjust the drain voltages so that at least two differentset currents flow. The measurement unit 120 then sequentially measuresgate voltages when the drain voltages are adjusted by the drain voltageadjustment circuit 180. The calculation unit 130 calculates thethreshold voltage Vth, based on the measured gate voltages, the setcurrents, and the value β calculated beforehand. Specifically, thecalculation unit 130 sequentially substitutes the measurement resultsinto the aforementioned expressions (6)′ and solves the expressions (6)′which are simultaneous expressions, thereby calculating the thresholdvoltage Vth. More specifically, it is possible to calculate thethreshold voltage Vth by using the following expression (7).

$\begin{matrix}\left\lbrack {{Expression}\mspace{20mu} 7} \right\rbrack & \; \\{{Vth} = {{Vofs} - \frac{\sqrt{\begin{matrix}{{Id}_{1}^{2} + \left( {{Id}_{2} - {\frac{\beta}{2}\left( {{Vg}_{1} - {Vg}_{2}} \right)^{2}}} \right)^{2} - {2 \cdot}} \\{{Id}_{1}\left( {{Id}_{2} + {\frac{\beta}{2}\left( {{Vg}_{1} - {Vg}_{2}} \right)^{2}}} \right)}\end{matrix}}}{\beta \left( {{Vg}_{1} - {Vg}_{2}} \right)}}} & (7)\end{matrix}$

FIG. 11( a) shows a conceptual diagram of an inspection device 10 in asecond modified example. In this example, a description will be given ofa case of adopting another method in order to allow a current to flow ina pixel electrode. Specifically, a pixel electrode connected with eachTFT included in a TFT array 20 is in contact with an inspection probe,instead of being subjected to blowing ionized air. More specifically,the pixel electrodes are pressed onto a piece of conductive rubber, anda voltage source connected with a common electrode is connected withthis conductive rubber. Apart from this example, the inspection probemay be inspection needles, conductive silicon, or the like.

FIG. 11( b) shows an equivalent circuit to a circuit where theinspection device 10 inspects the TFT array 20 in the second modifiedexample. The source of a TFT 220 included in the TFT array 20 isconnected with the pixel electrode, and this pixel electrode is groundedby a contact resistance of an unknown magnitude.

The first current supply circuit 100 supplies a current between thedrain and source of the TFT 220 by applying, to the drain of the TFT220, such a voltage as to allow the N-channel TFT 220 to operate in thesaturation region. Since a concrete circuit configuration of this firstcurrent supply circuit 100 is substantially the same as that of thefirst current supply circuit 100 shown in FIG. 8( a), a descriptionthereof will be omitted.

The gate voltage adjustment circuit 110 sequentially adjusts gatevoltages to be applied to the TFT 220 so that at least three differentspecified currents flow between the drain and source of the TFT 220.Since a concrete circuit configuration of this gate voltage adjustmentcircuit 110 is substantially the same as that of the gate voltageadjustment circuit 110 shown in FIG. 8( a), a description thereof willbe omitted. The measurement unit 120 sequentially measures the gatevoltages adjusted by the gate voltage adjustment circuit 110. Thecalculation unit 130 then calculates the value β and the thresholdvoltage Vth, based on the measured gate voltages. Concrete processingabout this will be described.

When the pixel electrode has a contact resistance R, since the pixelelectrode has a voltage drop R×Id, the expression (3) can be transformedinto the following expression (8).

$\begin{matrix}\left\lbrack {{Expression}\mspace{20mu} 8} \right\rbrack & \; \\{\sqrt{Id} = {\sqrt{\frac{\beta}{2}}\left( {{Vg} - {R \cdot {Id}} - {Vth}} \right)}} & (8)\end{matrix}$

The calculation unit 130 substitutes the measurement results obtained bythe measurement unit 120 into the expression (8), thereby obtainingexpressions (9).

$\begin{matrix}\left\lbrack {{Expression}\mspace{20mu} 9} \right\rbrack & \; \\{{\sqrt{{Id}_{1}} = {\sqrt{\frac{\beta}{2}}\left( {{Vg}_{1} - {R \cdot {Id}_{1}} - {Vth}} \right)}}{\sqrt{{Id}_{2}} = {\sqrt{\frac{\beta}{2}}\left( {{Vg}_{2} - {R \cdot {Id}_{2}} - {Vth}} \right)}}{\sqrt{{Id}_{3}} = {\sqrt{\frac{\beta}{2}}\left( {{Vg}_{3} - {R \cdot {Id}_{3}} - {Vth}} \right)}}} & (9)\end{matrix}$

Herein, Vg₁, Vg₂ and Vg₃ denote gate voltages measured by themeasurement unit 120; and Id₁, Id₂ and Id₃ denote specified currents attime points when Vg₁, Vg₂ and Vg₃ are measured, respectively. Here,since there are three unknowns, β, R and Vth, in these simultaneousexpressions, the calculation unit 130 can calculates β, R and Vth bysolving the expressions (9).

As described above, according to this example, it is possible toproperly calculate the value β and the threshold voltage Vth even when apixel electrode has a contact resistance.

FIGS. 12( a) and 12(b) each show a block diagram of an inspection device10 in a third modified example. In this example, the source or drain ofeach TFT included in the TFT array 20 is connected with a pixelelectrode. The pixel electrode has a potential difference the magnitudeof which is unknown and hardly variable from a ground potential. Forexample, the pixel electrode is irradiated with an electron beam or ionbeam which causes relatively small variation in the potential. In thiscase, unlike the example shown in FIG. 2, the inspection device 10 cancalculate the value β and the threshold voltage Vth with a moresimplified configuration.

FIG. 12( a) shows a circuit where the inspection device 10 calculatesthe value β of a TFT 260 when the source of the N-channel TFT 260 isgrounded. The inspection device 10 includes a gate voltage applicationcircuit 1100 and a drain voltage application circuit 1110. The gatevoltage application circuit 1100 applies a gate voltage to the TFT 260.The drain voltage application circuit 1110 applies, between the drainand source of the TFT 260, such a voltage as to cause the TFT 260 tooperate in the saturation region. Specifically, since the source of theTFT 260 is connected with the pixel electrode, the drain voltageapplication circuit 1110 applies the voltage to the drain of the TFT260.

The measurement unit 120 measures a drain current of the TFT 260 foreach of at least two voltages applied by the gate voltage applying 1100.The calculation unit 130 calculates the value β of the TFT 260, based ontwo sets of the gate voltage and the measured drain current.Specifically, the calculation unit 130 substitutes each set of the gatevoltage and the drain current for Vg and Id in the aforementionedexpression (4)′, respectively, thereby creating simultaneousexpressions. Then, the calculation unit 130 can calculate the values βand (Vs+Vth) by solving these simultaneous expressions.

FIG. 12( b) shows a circuit where the inspection device 10 calculatesthe threshold voltage Vth of the TFT 260 when the source of theN-channel TFT 260 is grounded. When the calculation unit 130 hascalculated the value β, the drain voltage application circuit 1110applies to the TFT 260 at least two drain voltages (for example,Vg−Vofs) which cause the TFT 260 to operate in the linear region. Themeasurement unit 120 then measures a drain current of TFT 260 for eachof the drain voltages applied by the drain voltage application circuit1110.

The calculation unit 130 then calculates the threshold voltage Vth,based on the value β which has been calculated already and on the draincurrents measured by the measurement unit 120. Specifically, thecalculation unit 130 may calculates the threshold voltage Vth bysubstituting each set of the drain current, the gate voltage and thevalue β into the aforementioned expressions (6)′and then solving thesimultaneous expressions obtained as a result of the substitution.

As described above, when the potential of a pixel electrode is stable,the inspection device 10 can calculate the value β and the thresholdvoltage Vth with a more simplified configuration.

FIGS. 13( a) and 13(b) show results of a simulation where the inspectiondevice 10 shown in FIG. 1 inspects the TFT array 20. As shown in thesedrawings, when ionized air is blown onto the pixel electrodes, there aresome occasions where the source voltage (Vs) periodically changes. Evenin this case, the gate voltage adjustment circuit 110 maintains aconstant drain current to be supplied from the first current supplycircuit 100 by maintaining a constant output potential (Vout) of thefirst current supply circuit 100. As a result, the gate voltage (Vg)varies with changes in the source voltage (Vs). For example, thesedrawings show gate voltages (Vg (4 μA)) when the drain current is set to4 μA which is a specified current, and gate voltages (Vg (2 μA)) whenthe drain current is set to 2 μA which is another specified current.

As shown in FIG. 13( b), the calculation unit 130 can calculate thevalue β based on an average of the gate voltages when the drain currentis 4 μA and on an average of the gate voltages when the drain current is2 μA. In the example of this drawing, the threshold voltage Vth of a TFTis 1.5 V and the value β is 2 μA/V² in practice. By comparison, theinspection device 10 calculated that the threshold voltage Vth was 1.4 Vand that the value β was 2.04 μA/V², as results of inspection. Asdescribed above, according to the present embodiment, the inspectiondevice 10 can calculate the value β with high precision.

FIGS. 14( a) and 14(b) show results of a simulation where the TFT array20 is inspected using a conventional technique. According to theconventional technique, it is very difficult to calculate the value β.As an example, a description will be given of a method of measuring thedrain current (Id) flowing when the drain voltage (Vd) and the gatevoltage (Vg) are fixed, for example.

According to this method, the drain current (Id) varies with changes inthe source voltage (Vs). Specifically, a TFT inverts its state into anoff state where the drain current is not allowed to flow or into an onstate where the drain current is allowed to flow and where the TFTreaches a saturated state. In this case, an average of the draincurrents is not a significant value, and therefore it is difficult tocalculate the value β by using such a technique as to simply calculatean average of the drain currents (Id).

FIGS. 15( a) and 15(b) show results of a simulation where the inspectiondevice 10 shown in FIG. 7 inspects the TFT array 20. Similarly to thecase of FIGS. 13( a) and 13(b), the source voltage (Vs) varies withtime. In order to maintain a constant potential difference (Vofs)between the gate voltage (Vg) and the drain voltage (Vd), the draincurrent adjustment circuit 150 adjusts the drain current (Id) byadjusting the voltage (Vc) to be applied to the second current supplycircuit 140. These drawings show drain voltages (Vd) and voltages (Vc)to be applied to the second current supply circuit 140 when the gatevoltage (Vg) is set to 8 V and the potential difference (Vofs) is set to2.5 V or 3.5 V.

The calculation unit 130 calculates an average of the drain currents,based on an average of the voltages (Vc) to be applied to the secondcurrent supply circuit 140. As a result, the calculation unit 130 cancalculate the threshold voltage Vth, based on at least two sets of adrain current, a gate voltage and a drain voltage. In the example ofthese drawings, the threshold voltage of a TFT is 1.5 V in practice. Bycomparison, the inspection device 10, as a result of inspection,calculated that the threshold voltage Vth was 1.48 V. As describedabove, according to the present embodiment, the inspection device 10 cancalculate the threshold voltage Vth with high precision.

FIG. 16( a) shows results of a simulation where the inspection device 10shown in FIG. 11 inspects the TFT array 20. Even when a contactresistance to a pixel electrode in the TFT array 20 varies in a rangefrom 1 kΩ to 50 kΩ, the inspection device 10 can properly calculate thevalue β and the threshold voltage Vth.

Meanwhile, FIG. 16( b) shows results of a simulation where, while thepixel electrodes are in contact with conductive rubber or the like, theTFT array 20 is inspected using a conventional method. The conventionalmethod is a method in which the drain currents (Id) when given gatevoltages (Vg) are applied to a TFT are measured, and the value β and thethreshold voltage Vth is calculated based on the measured draincurrents. Although source voltages (Vs) are listed in the table of thisdrawing, it is practically difficult to measure the source voltage, andtherefore calculation is performed using a gate voltage (Vg) for avoltage (Vgs) between the source and gate. Accordingly, as theresistance value increases, errors of the calculated value β and thelike become large.

As described through the present embodiment above, the inspection device10 can accurately measure the characteristic of each TFT, for example,when each pixel electrode in the TFT array 20 is grounded in anon-contact mode, and even when the source voltage of each TFT isunknown. Moreover, even when the source voltage fluctuates, theinspection device 10 can measure the characteristic of each TFT bymaintaining a constant drain current of each TFT. Furthermore, theinspection device 10 can accurately measure the characteristic of eachTFT, for example, when each pixel electrode in the TFT array 20 isbrought in contact with another electrode, and even when a contactresistance of an unknown magnitude occurs.

In addition, according to the present embodiment, using a configurationin which a general A/D converter is added to a computer, the inspectiondevice 10 can calculate the value β and the threshold voltage Vththrough arithmetic processing by a microprocessor or the like.Accordingly, an integrating circuit with high precision, a microcurrentmeasurement circuit or the like becomes unnecessary, and it is thuspossible to reduce manufacturing or management costs of the inspectiondevice 10.

According to the above-described embodiment, inspection devicesdescribed in the following respective items are realized.

(Item 1) An inspection device which inspects a thin film transistor(TFT) for supplying a current to a light emitting element, theinspection device comprising: a first current supply circuit whichsupplies a drain current between a drain and a source of the TFT; a gatevoltage adjustment circuit which adjust a gate voltage to be applied toa gate of the TFT so as to allow a predetermined specified current toflow between the drain and source of the TFT; and a measurement unitwhich measures the gate voltage adjusted by the gate voltage adjustmentcircuit.

(Item 2) The inspection device according to Item 1, wherein when thedrain current supplied by the first current supply circuit is largerthan the specified current, the gate voltage adjustment circuit adjuststhe gate voltage so as to reduce the drain current in question, and whenthe drain current supplied by the first current supply circuit issmaller than the specified current, the gate voltage adjustment circuitadjusts the gate voltage so as to increase the drain current inquestion.

(Item 3) The inspection device according to Item 2, wherein the firstcurrent supply circuit includes: a voltage source having a predeterminedpotential; an electrical resistance connected with the voltage source;and an output terminal connected with the electrical resistance andsupplying a current to the TFT, wherein the potential of the voltagesource and a resistance value of the electrical resistance are adjustedsuch that the first current supply circuit supplies the specifiedcurrent when a potential of the output terminal is equal to apredetermined specified voltage, and wherein the gate voltage adjustmentcircuit includes an amplifier which receives inputs of the potential ofthe output terminal and the specified voltage and, when the potential ofthe output terminal is different from the specified voltage, applies tothe TFT such a gate voltage as to make the potential of the outputterminal equal to the specified voltage.

(Item 4) The inspection device according to Item 1, further comprising acalculation unit, wherein the TFT operates in a linear region where thedrain current varies substantially linearly with voltages between thedrain and source or in a saturation region where the drain currentvaries less than in the linear region; one of the drain and source ofthe TFT has a potential difference of an unknown and variable magnitudefrom a ground potential; the first current supply circuit supplies adrain current by applying such a voltage as to cause the TFT to operatein the saturation region to the other one of the drain and source of theTFT; the gate voltage adjustment circuit sequentially adjusts the gatevoltages so as to allow the at least two specified currents of differentmagnitudes from each other to sequentially flow between the drain andsource; the measurement unit sequentially measures the at least two gatevoltages adjusted by the gate voltage adjustment circuit; and thecalculation unit calculates a value β which is a parameter indicating acurrent supply ability between the drain and source of the TFT, based onthe measured gate voltages.

(Item 5) The inspection device according to Item 4, further comprising asecond current supply circuit which supplies a drain current between thedrain and source of the TFT by applying a drain voltage to the drain ofthe TFT, the source of which has the potential difference of an unknownand variable magnitude from the ground potential; a gate voltageapplication circuit which applies a predetermined gate voltage to thegate of the TFT; and a drain current adjustment circuit which adjuststhe drain current supplied by the second current supply circuit so as tomake a potential difference between the gate voltage and the drainvoltage become a preset set potential and so as to cause the TFT tooperate in the linear region, wherein the measurement unit sequentiallymeasures the drain currents adjusted by the drain current adjustmentcircuit for the at least two different set potentials, and thecalculation unit calculates a threshold voltage which is a potentialdifference between the gate and source of the TFT necessary to allow acurrent to flow between the drain and source of the TFT, based on thesequentially measured drain currents and the calculated value P.

(Item 6) The inspection device according to Item 4, wherein the sourceof the TFT is grounded via an electrical resistance of an unknownmagnitude; the first current supply circuit supplies a drain currentbetween the drain and source of the TFT by applying a drain voltage tothe drain of the TFT; the gate voltage adjustment circuit sequentiallyadjusts the gate voltages so as to allow the at least three specifiedcurrents of different magnitudes from one another to sequentially flowbetween the drain and source; the measurement unit sequentially measuresthe at least three gate voltages adjusted by the gate voltage adjustmentcircuit; and the calculation unit calculates the value β and a thresholdvoltage which is a potential difference between the gate and source ofthe TFT necessary to allow a current to flow between the drain andsource of the TFT, based on the measured gate voltages.

(Item 7) The inspection device according to Item 4, wherein theinspection device is a device which inspects a TFT array including aplurality of TFTs arrayed in matrix, wherein the first current supplycircuit sequentially supplies a current between the drain and source ofeach TFT included in the TFT array; the gate voltage adjustment circuitsequentially adjusts the gate voltages so as to allow the at least twospecified currents of different magnitudes from each other tosequentially flow between the drain and source of a TFT to which thecurrent is supplied by the first current supply circuit; the measurementunit measures the gate voltage adjusted for each of the plurality ofTFTs; and the calculation unit calculates the value β for each of theplurality of TFTs and, when a range of dispersion of the value β foreach TFT is wider than a predetermined reference, provides an output tothe effect that the TFT array is defective.

(Item 8) The inspection device according to Item 1, wherein theinspection device inspects a TFT array including a plurality of TFTsarrayed in matrix and further comprises a calculation unit, wherein thefirst current supply circuit sequentially supplies a current between thedrain and source of each TFT included in the TFT array; the gate voltageadjustment circuit sequentially adjusts the gate voltages so as to allowthe at least two specified currents of different magnitudes from eachother to sequentially flow between the drain and source of a TFT towhich the current is supplied by the first current supply circuit; themeasurement unit measures the gate voltages adjusted for each of theplurality of TFTs; and the calculation unit, based on the at least twomeasured gate voltages and for each of the plurality of TFTs, calculatesa threshold of a potential difference between the gate voltage and aground potential necessary to allow a current to flow between the drainand source of the TFT and, when a range of dispersion of the thresholdcalculated for each TFT is wider than a predetermined reference,provides an output to the effect that the TFT array is defective.

(Item 9) The inspection device according to Item 8, further comprisingan offset current measurement unit, wherein the TFT array includes powersupply wiring common to the plurality of TFTs; the first power supplycircuit supplies a drain current between the drain and source of each ofthe TFTs through the power supply wiring; and the offset currentmeasurement unit measures a magnitude of an offset current which issupplied from the first current supply circuit to the power supplywiring in a state where all the TFTs in the TFT array are not drivenand, when the measurement unit measures the gate voltages, furthersupplies the offset current to the power supply wiring.

(Item 10) An inspection device which inspects a thin film transistor(TFT) for supplying a current to a light emitting element, the TFToperating in a linear region where the drain current variessubstantially linearly with voltages between a drain and a source of theTFT or in a saturation region where the drain current varies less thanin the linear region, the source of the TFT having a potentialdifference of an unknown and variable magnitude from a ground potential,the inspection device comprising: a second current supply circuit whichsupplies a drain current between the drain and source of the TFT byapplying a drain voltage to the drain of the TFT; a gate voltageapplication circuit which applies a predetermined gate voltage to a gateof the TFT; a drain current adjustment circuit which adjusts the draincurrent supplied by the second current supply circuit so as to make apotential difference between the gate voltage and the drain voltagebecome a preset set potential and so as to cause the TFT to operate inthe linear region; a measurement unit which sequentially measures thedrain currents adjusted by the drain current adjustment circuit for theat least two different set potentials; and a calculation unit whichcalculates a threshold voltage that is a threshold of a potentialdifference between the gate and source of the TFT necessary to allow acurrent to flow between the drain and source of the TFT, based on thesequentially measured drain currents and a value β that is a parameterindicating a current supply ability between the drain and source of theTFT.

(Item 11) The inspection device according to Item 10, wherein the secondcurrent supply circuit includes: an input terminal; an electricalresistance one end of which is connected with the input terminal; and anoutput terminal which is connected with the other end of the electricalresistance and supplies a current to the drain of the TFT, and whereinthe drain current adjustment circuit includes: a potential differencesetting circuit which receives an input of the drain voltage and outputsa voltage that is different from the inputted drain voltage by the setpotential; and an amplifier which receives, as inputs, the output of thepotential difference setting circuit and the gate voltage and, when theoutput voltage of the potential difference setting circuit is differentfrom the gate voltage, applies to the input terminal such a voltage asto make the output voltage of the potential difference setting circuitequal to the gate voltage.

(Item 12) An inspection device which inspects a thin film transistor(TFT) for supplying a current to a light emitting element, the TFToperating in a linear region where the drain current variessubstantially linearly with voltages between a drain and a source of theTFT or in a saturation region where the drain current varies less thanin the linear region, the source of the TFT having a potentialdifference of an unknown and variable magnitude from a ground potential,the inspection device comprising: a potential difference retainingcircuit which maintains such a potential difference as to cause the TFTto operate in the linear region between a gate voltage to be applied toa gate of the TFT and a drain voltage to be applied to the drain of theTFT; a third current supply circuit which supplies a drain currentbetween the drain and source of the TFT by applying a drain voltage tothe drain of the TFT; a drain voltage adjustment circuit which adjuststhe drain voltage so as to allow a preset set current to flow betweenthe drain and source of the TFT; a measurement unit which causes thedrain voltage adjustment circuit to sequentially adjust the drainvoltages so as to allow the at least two different set currents to flow,and sequentially measures the gate voltages when the drain voltages areadjusted; and a calculation unit which calculates a threshold voltagethat is a threshold of a potential difference between the gate andsource of the TFT necessary to allow a current to flow between the drainand source of the TFT, based on the measured gate voltages, draincurrents calculated based on the gate voltages, and a value β that is aparameter indicating a current supply ability between the drain andsource of the TFT.

(Item 13) The inspection device according to Item 12, wherein the thirdcurrent supply circuit includes: an input terminal; an output terminal;and an electrical resistance one end of which is connected with theinput terminal, the other end of which is connected with the outputterminal, and which has such a resistance value as to allow the thirdcurrent supply circuit to output the set current when a potentialdifference between the input and output terminals is equal to apredetermined specified potential, and wherein the drain voltageadjustment circuit includes: a potential difference setting circuitwhich receives an input of a potential of the input terminal and outputsa voltage that is different from the potential of the input terminal bythe specified potential; and an amplifier which receives, as inputs, apotential of the output terminal and the output voltage of the potentialdifference setting circuit and, when the potential of the outputterminal is different from the output voltage of the potentialdifference setting circuit, applies to the input terminal such a voltageas to make the potential of the output terminal equal to the outputvoltage of the potential difference setting circuit.

(Item 14) An inspection device which inspects a thin film transistor(TFT) for supplying a current to a light emitting element, one of adrain and a source of the TFT having a potential difference of anunknown magnitude from a ground potential, the TFT operating in a linearregion where the drain current varies substantially linearly withvoltages between the drain and source of the TFT or in a saturationregion where the drain current varies less than in the linear region,the inspection device comprising: a gate voltage application circuitwhich applies a gate voltage to a gate of the TFT; a drain voltageapplication circuit which applies between the drain and source such avoltage as to cause the TFT to operate in the saturation region; ameasurement unit which measures a drain current flowing between thedrain and source of the TFT for each of the at least two gate voltagesapplied by the gate voltage application circuit; and a calculation unitwhich calculates a value β that is a parameter of a current supplyability between the drain and source of the TFT, based on the measureddrain currents.

(Item 15) The inspection device according to Item 14, wherein the sourceof the TFT has a potential difference of an unknown and variablemagnitude from a ground potential, and wherein when the calculation unithas calculated the value β, the drain voltage application circuitsequentially applies to the drain of the TFT such at least two voltagesas to cause the TFT to operate in the linear region; the measurementunit measures a drain current flowing between the drain and source ofthe TFT for each of the voltages sequentially applied by the drainvoltage application circuit; and the calculation unit calculates athreshold voltage which is a threshold of a potential difference betweenthe gate and source necessary for the TFT to allow a current to flowbetween the drain and source, based on the calculated value β and thedrain currents measured by the measurement unit.

Although the present invention has hitherto been described using theembodiment, the technical scope of the present invention is not limitedto the scope described in the embodiment. It is apparent to thoseskilled in the art that it is possible to add various alterations ormodifications to the above-described embodiment. It is apparent fromdescription in the scope of claims that modes to which such alterationsor modifications are added can be included in the technical scope of thepresent invention.

Although the preferred embodiment of the present invention has beendescribed in detail, it should be understood that various changes,substitutions and alternations can be made therein without departingfrom spirit and scope of the inventions as defined by the appendedclaims.

1. An inspection device adapted to inspect a thin film transistor (TFT)for supplying a current to a light emitting element, said inspectiondevice comprising: a first current supply circuit adapted to supply adrain current between a drain and a source of said TFT; a gate voltageadjustment circuit adapted to adjust a gate voltage to be applied to agate of said TFT so as to allow a predetermined specified current toflow between said drain and said source of said TFT; a measurement unitadapted to measure said gate voltage adjusted by said gate voltageadjustment circuit; and a calculation unit operatively connected to saidmeasurement unit and adapted to calculate a threshold voltage that is athreshold of a potential difference between said gate and said source ofsaid TFT necessary to allow a current to flow between said drain andsaid source of said TFT based on the sequentially measured draincurrents and a value β that is a parameter indicating a level of currentsupply between said drain and said source of said TFT.
 2. The inspectiondevice according to claim 1, wherein when said drain current supplied bysaid first current supply circuit is larger, as determined by said gatevoltage adjustment circuit, than said predetermined specified current,then said gate voltage adjustment circuit is adapted to adjust said gatevoltage so as to reduce said drain current, and when said drain currentsupplied by said first current supply circuit is smaller than saidpredetermined specified current, then said gate voltage adjustmentcircuit is adapted to adjust said gate voltage so as to increase saiddrain current.
 3. The inspection device according to claim 1, whereinsaid TFT operates in a linear region where said drain current variessubstantially linearly with voltages between said drain and said sourceor in a saturation region where said drain current varies less than insaid linear region, wherein one of said drain and said source of saidTFT has a potential difference of an unknown and variable magnitude froma ground potential, wherein said first current supply circuit is adaptedto supply said drain current by applying such a voltage so as to causesaid TFT to operate in said saturation region to an other one of saiddrain and said source of said TFT, wherein said gate voltage adjustmentcircuit is adapted to sequentially adjust gate voltages so as to allowat least two specified currents of different magnitudes from each otherto sequentially flow between said drain and said source, wherein saidmeasurement unit is adapted to sequentially measure said at least twogate voltages adjusted by said gate voltage adjustment circuit, andwherein said calculation unit is adapted to calculate said value β,wherein said value β indicating a level of current supply between saiddrain and said source of said TFT is based on the measured gatevoltages.
 4. The inspection device according to claim 3, furthercomprising: a second current supply circuit adapted to supply a draincurrent between said drain and said source of said TFT by applying adrain voltage to said drain of said TFT, wherein said source comprises apotential difference of an unknown and variable magnitude from saidground potential; a gate voltage application circuit adapted to apply apredetermined gate voltage to said gate of said TFT; and a drain currentadjustment circuit adapted to adjust said drain current supplied by saidsecond current supply circuit so as to make a potential differencebetween said gate voltage and said drain voltage become a preset setpotential and so as to cause said TFT to operate in said linear region,and wherein said measurement unit is adapted to sequentially measuredrain currents adjusted by said drain current adjustment circuit for atleast two different set potentials.
 5. The inspection device accordingto claim 3, wherein said inspection device is a device adapted toinspect a TFT array including a plurality of TFTs arrayed in a matrix,wherein said first current supply circuit is adapted to sequentiallysupply said drain current between said drain and said source of eachsaid TFT included in said TFT array, wherein said gate voltageadjustment circuit is adapted to sequentially adjust said gate voltagesso as to allow said at least two specified currents of differentmagnitudes from each other to sequentially flow between said drain andsaid source of said TFT to which a current is supplied by said firstcurrent supply circuit, wherein said measurement unit is adapted tomeasure said gate voltage adjusted for each of said plurality of TFTs,and wherein said calculation unit is adapted to calculate said value βfor each of said plurality of TFTs and when a range of dispersion ofsaid value β for each said TFT is wider than a predetermined reference,then said calculation unit is adapted to provide an output indicatingthat said TFT array is defective.
 6. The inspection device according toclaim 1, wherein said inspection device is adapted to inspect a TFTarray comprising a plurality of TFTs arranged in a matrix, wherein saidfirst current supply circuit is adapted to sequentially supply saiddrain current between said drain and said source of each said TFTincluded in said TFT array, wherein said gate voltage adjustment circuitis adapted to sequentially adjust said gate voltage so as to allow atleast two predetermined specified currents of different magnitudes fromeach other to sequentially flow between said drain and said source ofsaid TFT to which a current is supplied by said first current supplycircuit; wherein said measurement unit is adapted to measure said gatevoltages adjusted for each of said plurality of TFTs, and wherein when arange of dispersion of the threshold of potential difference calculatedfor each said TFT is wider than a predetermined reference, then saidcalculation unit is adapted to provide an output indicating that saidTFT array is defective.
 7. The inspection device according to claim 6,further comprising an offset current measurement unit, wherein said TFTarray comprises power supply wiring common to said plurality of TFTs,wherein said first power supply circuit is adapted to supply said draincurrent between said drain and said source of each of said TFTs throughsaid power supply wiring, and wherein said offset current measurementunit is adapted to measure a magnitude of an offset current which issupplied from said first current supply circuit to said power supplywiring in a state where all said TFTs in said TFT array are not drivenand, when said measurement unit measures said gate voltages, then saidoffset current measurement unit is adapted to supply said offset currentto said power supply wiring.
 8. An inspection device adapted to inspecta thin film transistor (TFT) for supplying a current to a light emittingelement, wherein said TFT is adapted to operate in any of (i) a linearregion where a drain current varies substantially linearly with voltagesbetween a drain and a source of said TFT, and (ii) a saturation regionwhere said drain current varies less than in said linear region, whereinsaid source of said TFT comprises a potential difference of an unknownand variable magnitude from a ground potential, wherein said inspectiondevice comprises: a current supply circuit adapted to supply a draincurrent between said drain and said source of said TFT by applying adrain voltage to said drain of said TFT; a gate voltage applicationcircuit adapted to apply a predetermined gate voltage to a gate of saidTFT; a drain current adjustment circuit adapted to adjust said draincurrent supplied by said current supply circuit so as to make apotential difference between said gate voltage and said drain voltagebecome a preset set potential and so as to cause said TFT to operate insaid linear region; a measurement unit adapted to sequentially measuresaid drain current adjusted by said drain current adjustment circuit forat least two different set potentials; and a calculation unitoperatively connected to said measurement unit and adapted to calculatea threshold voltage that is a threshold of a potential differencebetween said gate and said source of said TFT necessary to allow acurrent to flow between said drain and said source of said TFT based onthe sequentially measured drain currents and a value β that is aparameter indicating a level of current supply between said drain andsaid source of said TFT.
 9. An inspection device adapted to inspect athin film transistor (TFT) for supplying a current to a light emittingelement, wherein said TFT is adapted to operate in any of (i) a linearregion where a drain current varies substantially linearly with voltagesbetween a drain and a source of said TFT, and (ii) a saturation regionwhere said drain current varies less than in said linear region, whereinsaid source of said TFT comprises a potential difference of an unknownand variable magnitude from a ground potential, wherein said inspectiondevice comprises: a potential difference retaining circuit adapted tomaintain such a potential difference so as to cause said TFT to operatein said linear region between a gate voltage to be applied to a gate ofsaid TFT and a drain voltage to be applied to said drain of said TFT; acurrent supply circuit adapted to supply a drain current between saiddrain and said source of said TFT by applying said drain voltage to saiddrain of said TFT; a drain voltage adjustment circuit adapted to adjustsaid drain voltage so as to allow a preset set current to flow betweensaid drain and said source of said TFT; a measurement unit adapted tocause said drain voltage adjustment circuit to sequentially adjust saiddrain voltage so as to allow at least two different set currents toflow, wherein said measurement unit is adapted to sequentially measuresaid gate voltage when said drain voltage is adjusted; and a calculationunit operatively connected to said measurement unit and adapted tocalculate a threshold voltage that is a threshold of a potentialdifference between said gate and said source of said TFT necessary toallow a current to flow between said drain and said source of said TFTbased on the sequentially measured gate voltages, drain currentscalculated based on gate voltages, and a value β that is a parameterindicating a level of current supply between said drain and said sourceof said TFT.
 10. An inspection device adapted to inspect a thin filmtransistor (TFT) for supplying a current to a light emitting element,wherein one of a drain and a source of said TFT comprises a potentialdifference of an unknown magnitude from a ground potential, wherein saidTFT is adapted to operate in (i) a linear region where a drain currentvaries substantially linearly with voltages between said drain and saidsource of said TFT, and (ii) a saturation region where said draincurrent varies less than in said linear region, and wherein saidinspection device comprises: a gate voltage application circuit adaptedto apply a gate voltage to a gate of said TFT; a drain voltageapplication circuit adapted to apply between said drain and said sourcesuch a voltage so as to cause said TFT to operate in said saturationregion; a measurement unit adapted to measure a drain current flowingbetween said drain and said source of said TFT for each of at least twogate voltages applied by said gate voltage application circuit; and acalculation unit operatively connected to said measurement unit andadapted to calculate a threshold voltage that is a threshold of apotential difference between said gate and said source of said TFTnecessary to allow a current to flow between said drain and said sourceof said TFT based on the measured drain current and a value β that is aparameter indicating a level of current supply between said drain andsaid source of said TFT.